Spin-constrained optoelectronic functionality in two-dimensional ferromagnetic semiconductor heterojunctions-Reference-Cited by-同舟云学术

Spin-constrained optoelectronic functionality in two-dimensional ferromagnetic semiconductor heterojunctions

Published:2021 Issue:4 Volume:8 Page:1323-1333
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Guo Yilv¹²³⁴,Zhang Yehui¹²³⁴,Zhou Zhaobo¹²³⁴,Zhang Xiwen⁵²³⁴,Wang Bing⁶⁷⁸⁹⁴^ORCID,Yuan Shijun¹²³⁴,Dong Shuai¹²³⁴^ORCID,Wang Jinlan¹²³⁴^ORCID

Affiliation:

1. School of Physics

2. Southeast University

3. Nanjing 211189

4. China

5. School of Mechanism Engineering & School of Physics

6. Institute for Computational Materials Science

7. School of Physics and Electronics

8. Henan University

9. Kaifeng 475004

Abstract

A new type of spin-constrained optoelectronic device model implemented using 2D ferromagnetic semiconductor heterostructures is proposed, which utilizes the coupling between the interlayer magnetic orientation and the spin-polarized band structure.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Scientific Research Foundation of the Graduate School of Southeast University

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/MH/D0MH01480J

Reference77 articles.

1. Recent Advances in Ultrathin Two-Dimensional Nanomaterials

2. 2D transition metal dichalcogenides

3. Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors

4. Magnetic Two-Dimensional Chromium Trihalides: A Theoretical Perspective

5. Exploitable Magnetic Anisotropy of the Two-Dimensional Magnet CrI3

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor;Nano Select;2023-11-22

2. Enhancement of magnetic stability and absorption properties of monolayer NiZr magnetic semiconductor by electric field modulation;Results in Physics;2023-11

3. Ultrafast Laser Control of Antiferromagnetic–Ferrimagnetic Switching in Two-Dimensional Ferromagnetic Semiconductor Heterostructures;Nano Letters;2023-06-12

4. Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures;Advanced Functional Materials;2023-04-27

5. Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX₃ (X = I, Br)/2D Metal Contacts;The Journal of Physical Chemistry Letters;2023-03-13