Ru doping enhanced resistive switching behavior in InGaZnO thin films-Reference-Cited by-同舟云学术

Ru doping enhanced resistive switching behavior in InGaZnO thin films

Published:2016 Issue:48 Volume:6 Page:42347-42352
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Li Qin¹²³⁴,Li Yanhuai¹²³⁴,Gao Leiwen¹²³⁴,Ma Fei¹²³⁴,Song Zhongxiao¹²³⁴,Xu Kewei¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials

2. Xi'an Jiaotong University

3. Xi'an 710049

4. China

5. Department of Physics and Opt-electronic Engineering

Abstract

In this paper, ruthenium (Ru) doped InGaZnO (IGZO:Ru) thin films were deposited by magnetron co-sputtering and the resistive switching behaviors were investigated.

Funder

Natural Science Foundation of Shaanxi Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA02174C

Reference35 articles.

1. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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4. Effects of metal electrodes on the resistive memory switching property of NiO thin films

5. Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

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