Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors-Reference-Cited by-同舟云学术

Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors

Published:2020 Issue:4 Volume:2 Page:1465-1472
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Simanullang Marolop Dapot Krisman¹²³⁴,Wisna G. Bimananda M.⁵⁶⁷⁸^ORCID,Usami Koichi¹²³⁴,Oda Shunri¹²³⁴

Affiliation:

1. Quantum Nanoelectronics Research Center

2. Tokyo Institute of Technology

3. Tokyo 152-8552

4. Japan

5. Department of Engineering Physics

6. Bandung Institute of Technology

7. Bandung 40132

8. Indonesia

Abstract

Demonstration of high-performance p-channel depletion mode field-effect transistors and conductance quantization of multi-mode ballistic Ge-core/a-Si shell nanowires.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/D0NA00023J

Reference30 articles.

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3. Academic and industry research progress in germanium nanodevices

4. Germanium nanowires: from synthesis, surface chemistry, and assembly to devices

5. Halide Passivation of Germanium Nanowires

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