Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu3In5Te9-based chalcogenides

Author:

Li Min12345,Luo Yong5674ORCID,Hu Xiaojuan891011,Han Zhongkang891011,Liu Xianglian1234,Cui Jiaolin1234ORCID

Affiliation:

1. School of Materials and Chemical Engineering

2. Ningbo University of Technology

3. Ningbo 315016

4. China

5. Materials Science and Engineering College

6. China University of Mining and Technology

7. Xuzhou 221116

8. Theory Department

9. Fritz Haber Institute of the Max-Planck-Society

10. D-14195 Berlin

11. Germany

Abstract

Co-regulation of both the copper vacancy concentration (Vc) and point defect GaIn realizing the high carrier concentration and low lattice thermal conductivity in Cu3In5Te9-based chalcogenides simultaneously.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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