Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase-Reference-Cited by-同舟云学术

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Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Published:2020 Issue: Volume:222 Page:217-239
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Ossicini Stefano¹²³⁴⁵^ORCID,Marri Ivan⁶⁷⁸⁵^ORCID,Amato Michele⁹¹⁰¹¹¹²¹³^ORCID,Palummo Maurizia¹⁴¹⁵¹⁶⁵^ORCID,Canadell Enric¹⁷¹⁸¹⁹²⁰^ORCID,Rurali Riccardo¹⁷¹⁸¹⁹²⁰^ORCID

Affiliation:

1. Dipartimento di Scienze e Metodi Dell’Ingegneria

2. Centro Interdipartimentale En&Tech

3. Universitá di Modena e Reggio Emilia

4. I-42125 Reggio Emilia

5. Italy

6. Centro S3

7. CNR-Istituto di Nanoscienze

8. I-41125 Modena

9. Laboratoire de Physique des Solides (LPS)

10. CNRS

11. Université Paris Sud

12. Université Paris-Saclay

13. Centre Scientifique D’Orsay

14. Dipartimento di Fisica and INFN

15. Universitá di Roma Tor Vergata

16. 00133 Roma

17. Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC)

18. Campus de Bellaterra

19. Barcelona

20. Spain

Abstract

Results from ab initio calculations for singly- and co- doped Si nanocrystals and nanowires are presented.

Funder

Università Degli Studi di Modena e Reggio Emila

Horizon 2020 Framework Programme

Grand Équipement National De Calcul Intensif

Agence Nationale de la Recherche

Ministerio de Economía y Competitividad

Generalitat de Catalunya

Instituto Nazionale di Fisica Nucleare

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/FD/C9FD00085B

Reference153 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Quantum size effects on photoluminescence in ultrafine Si particles

3. Gap opening in ultrathin Si layers: Role of confined and interface states

4. Porous silicon: a quantum sponge structure for silicon based optoelectronics

5. Colloquium: Structural, electronic, and transport properties of silicon nanowires

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1. Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures;Advanced Physics Research;2023-03-18

2. Plasmon resonances in silicon nanowires: geometry effects on the trade-off between dielectric and metallic behaviour;Optical Materials Express;2023-02-07

3. Recombination, multiplication, and transfer of electron-hole pairs in silicon nanocrystals: Effects of quantum confinement, doping, and surface chemistry;Journal of Luminescence;2021-05

4. Multiple exciton generation in isolated and interacting silicon nanocrystals;Nanoscale;2021

5. Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature;Journal of Materials Science: Materials in Electronics;2020-08-30

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