GaN nanowire field emitters with the adsorption of Pt nanoparticles-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

GaN nanowire field emitters with the adsorption of Pt nanoparticles

Published:2017 Issue:36 Volume:7 Page:22441-22446
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Cui Zhen¹²³⁴^ORCID,Ke Xizheng¹²³⁴,Li Enling¹²³⁴,Zhao Taifei¹²³⁴,Qi Qingping¹²³⁴,Yan Jie¹²³⁴,Ding Yingchun⁵⁶⁷⁸,Liu Tong⁹¹⁰¹¹¹²

Affiliation:

1. School of Automation and Information Engineering

2. Xi'an University of Technology

3. Xi'an 710048

4. Republic of China

5. College of Optoelectronics Technology

6. Chengdu University of Information Technology

7. Chengdu 610225

8. People's Republic of China

9. School of Physics & Astronomy

10. Queen Mary University of London

11. London E1 4NS

12. UK

Abstract

We report Pt NP coated GaN NWs through CVD method and the fabrication of their field emitters.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA02568H

Reference33 articles.

1. Ion‐implanted GaN junction field effect transistor

2. High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Single gallium nitride nanowire lasers

5. Formation of GaN Self-Organized Nanotips by Reactive Ion Etching

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-doping effects and carrier mobility of the H-GaN-F and h-BN stacking hetero-structures;Materials Science in Semiconductor Processing;2024-05

2. Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics;ACS Applied Materials & Interfaces;2024-03-01

3. Research on Field‐Assisted Gallium Nitride Nanorod Array Photocathode;physica status solidi (b);2022-08-29

4. Controlled growth of gallium nitride nanowires on silicon and their utility in high performance Ultraviolet‑A photodetectors;Sensors and Actuators A: Physical;2021-12

5. Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process;IEEE Electron Device Letters;2021-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3