Expedient floating process for ultra-thin InGaZnO thin-film-transistors and their high bending performance-Reference-Cited by-同舟云学术

Expedient floating process for ultra-thin InGaZnO thin-film-transistors and their high bending performance

Published:2016 Issue:68 Volume:6 Page:63418-63424
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kang Won Jun¹²³⁴,Ahn Cheol Hyoun¹²³⁴,Yun Myeong Gu¹²³⁴,Cho Sung Woon¹²³⁴,Kim Ye Kyun¹²³⁴,Kim Da Eun¹²³⁴,Kim Bora¹²³⁴,Cho Hyung Koun¹²³⁴,Kim Yunseok¹²³⁴

Affiliation:

1. School of Advanced Materials Science and Engineering

2. Sungkyunkwan University

3. Suwon

4. Republic of Korea

Abstract

Polyvinyl alcohol with low molecular weight exhibited good surface morphology and quick floating time for the fabrication of the top-gate oxide TFTs.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA06372A

Reference27 articles.

1. Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

2. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance

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