Impacts of defects on the mechanical and thermal properties of SiC and GeC monolayers

Author:

Ren Kai1ORCID,Huang Lei1,Shu Huabing2ORCID,Zhang Guoqiang3,Mu Weihua4,Zhang Huanping1,Qin Huasong3ORCID,Zhang Gang5ORCID

Affiliation:

1. School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China

2. School of Science, Jiangsu University of Science and Technology, Zhenjiang 212001, China

3. Laboratory for Multiscale Mechanics and Medical Science SV LAB, School of Aerospace Xi’an Jiaotong University, Xi’an 710049, China

4. Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou, Zhejiang 325000, China

5. Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore

Abstract

Defect engineering is an effective way to tune the mechanical and thermal properties of the SiC and GeC using as a promising thermal management of 2D devices.

Funder

Fundamental Research Funds for the Central Universities

China Postdoctoral Science Foundation

National Natural Science Foundation of China

University of Chinese Academy of Sciences

Natural Science Foundation of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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