Failure Estimates for SiC Power MOSFETs in Space Electronics
Author:
Funder
National Aeronautics and Space Administration
Publisher
MDPI AG
Subject
Aerospace Engineering
Link
http://www.mdpi.com/2226-4310/5/3/67/pdf
Reference23 articles.
1. Silicon carbide benefits and advantages for power electronics circuits and systems
2. Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
3. Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
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