Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes-Reference-Cited by-同舟云学术

Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes

Published:2021 Issue:1 Volume:9 Page:199-207
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Aftab Sikandar¹²³⁴^ORCID,Samiya Ms⁵⁶⁷⁸,Haq Hafiz Mansoor Ul⁹¹⁰¹¹¹²,Iqbal Muhammad Waqas⁹¹⁰¹¹¹²,Hussain Muhammad¹³⁶¹⁴¹⁵,Yousuf Saqlain⁹¹⁶¹⁷¹⁵,Rehman Atteq Ur¹⁸¹⁹²⁰,Khan Muhammad Usman²¹²²²³²⁴²⁵,Ahmed Zaheer²⁶²⁷²⁸¹²,Iqbal Muhammad Zahir²⁹³⁰³¹³²¹²^ORCID

Affiliation:

1. Department of Engineering Science

2. Simon Fraser University

3. Burnaby

4. Canada

5. Department of Civil and Environmental Engineering

6. Sejong University

7. Gwangjin-gu

8. Korea

9. Department of Physics

10. Riphah International University

11. Lahore

12. Pakistan

13. Department of Nanotechnology and Advanced Materials Engineering, and HMC

14. Seoul

15. South Korea

16. Sungkyunkwan University

17. Suwon

18. Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)

19. Thuwal 23955-6900

20. Kingdom of Saudi Arabia

21. National Key Laboratory of Tunable Laser Technology, Institute of Optoelectronics

22. Department of Electronics Science and Technology

23. Harbin Institute of Technology

24. Harbin 150080

25. China

26. Department of Biochemistry

27. University of Agriculture

28. Faisalabad

29. Nanotechnology Research Laboratory

30. Faculty of Engineering Sciences

31. GIK Institute of Engineering Sciences and Technology

32. Topi 23640

Abstract

Here, novel lateral PtSe₂ p–n junctions are fabricated based on the PtSe₂/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN).

Funder

Higher Education Commission, Pakistan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04642F

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1. Van der Waals heterojunction diode composed of WS2flake placed on p-type Si substrate

2. Ultrasensitive photodetectors based on monolayer MoS2

3. Large-area synthesis of monolayer WS2and its ambient-sensitive photo-detecting performance