Antisite defects in layered multiferroic CuCr0.9In0.1P2S6-Reference-Cited by-同舟云学术

Antisite defects in layered multiferroic CuCr0.9In0.1P2S6

Published:2015 Issue:44 Volume:7 Page:18579-18583
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

He Qian¹²³,Belianinov Alex⁴²³,Dziaugys Andrius⁵⁶⁷⁸,Maksymovych Petro⁴²³,Vysochanskii Yulian⁹¹⁰¹¹,Kalinin Sergei V.⁴²³,Borisevich Albina Y.¹²³⁴²

Affiliation:

1. Materials Science and Technology Division

2. Oak Ridge National Laboratory

3. Oak Ridge, USA

4. The Institute for Functional Imaging of Materials and the Center for Nanophase Materials Sciences

5. Department of Radiophysics

6. Faculty of Physics

7. Vilnius University

8. , Lithuania

9. Institute of Solid State Physics and Chemistry

10. Uzhgorod University

11. Uzhgorod, Ukraine 88000

Abstract

CuCr_1−xIn_xP₂S₆ compounds are promising candidates for 2D materials with additional functionalities such as ferroelectricity. Quantitative STEM-HAADF studies found that in addition to isovalently replacing Cr³⁺, In³⁺ dopants can also occupy Cu⁺ sites, forming antisite defects.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04779J

Reference27 articles.

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4. Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks

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