Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory-Reference-Cited by-同舟云学术

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Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Published:2013 Issue:45 Volume:1 Page:7593
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Huang Teng-Han,Yang Po-Kang,Chang Wen-Yuan,Chien Jui-Fen,Kang Chen-Fang,Chen Miin-Jang,He Jr-Hau

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC31542H

Reference26 articles.

1. ZnO/Al2O3core–shell nanorod arrays: growth, structural characterization, and luminescent properties

2. Polymer functionalized ZnO nanobelts as oxygen sensors with a significant response enhancement

3. Influence of oxygen vacancies on Schottky contacts to ZnO

4. Probing Surface Band Bending of Surface-Engineered Metal Oxide Nanowires

5. Surface effects on optical and electrical properties of ZnO nanostructures

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1. Atomic Layer Deposition Films for Resistive Random‐Access Memories;Advanced Materials Technologies;2024-04-12

2. Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors;IEEE Journal of the Electron Devices Society;2024

3. Study on Magnetron Sputtered Nb‐Doped ZnO Thin Films switching properties for RRAM Applications;ChemistrySelect;2023-10-15

4. Exploiting the complete efficacy of 3D-nitrogen-doped ZnO nanowires photoanode via type-II ZnS core-shell formation toward highly stable photoelectrochemical water splitting;Materials Today Physics;2023-05

5. Resistive switching behaviour of novel GdMnO3-based heterostructures;Surfaces and Interfaces;2022-12

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