Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors-Reference-Cited by-同舟云学术

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Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors

Published:2012 Issue:41 Volume:14 Page:14142
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Y.,Lee B.,Yi H. T.,Lee S. S.,Payne M. M.,Pola S.,Kuo C.-H.,Loo Y.-L.,Anthony J. E.,Tao Y. T.,Podzorov V.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2012/CP/C2CP41823A

Reference56 articles.

1. Organic Field-Effect Transistors

2. Reliability of Organic Field-Effect Transistors

3. Bias stress in organic thin-film transistors and logic gates

4. Energy Levels of Electron and Hole Traps in the Band Gap of Doped Anthracene Crystals

5. Gap states in organic semiconductors: Hydrogen- and oxygen-induced states in pentacene

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