Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations-Reference-Cited by-同舟云学术

Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

Published:2015 Issue:41 Volume:3 Page:10898-10906
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Imam Mewlude¹²³⁴⁵^ORCID,Gaul Konstantin⁶⁷⁸⁹,Stegmüller Andreas⁶⁷⁸⁹,Höglund Carina¹²³⁴⁵,Jensen Jens¹²³⁴,Hultman Lars¹²³⁴,Birch Jens¹²³⁴,Tonner Ralf⁶⁷⁸⁹,Pedersen Henrik¹²³⁴^ORCID

Affiliation:

1. Department of Physics, Chemistry, and Biology (IFM)

2. Linköping University

3. SE-58183 Linköping

4. Sweden

5. European Spallation Source ESS AB

6. Fachbereich Chemie and Material Sciences Center

7. Philipps-Universität Marburg

8. D-35032 Marburg

9. Germany

Abstract

We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of B_xC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02293B

Reference40 articles.

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