A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity-Reference-Cited by-同舟云学术

A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity

Published:2015 Issue:18 Volume:3 Page:4723-4728
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Luo Lin-Bao¹²³,Hu Han¹²³,Wang Xian-He¹²³,Lu Rui¹²³,Zou Yi-Feng¹²³,Yu Yong-Qiang¹²³,Liang Feng-Xia⁴⁵²³

Affiliation:

1. School of Electronic Science and Applied Physics Hefei University of Technology

2. Hefei

3. P. R. China

4. School of Materials Science and Technology and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices

5. Hefei University of Technology

Abstract

We report on a simple passivation strategy to improve the device performance of a near infrared (NIR) photodetector. Optoelectronic analysis reveals that after ultrathin AlO_xpassivation, the device exhibits an obvious increase in on/off ratio. What is more, the response speed of the device was improved by more than 100 times, from 48 μs to 380 ns.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00449G

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