Assessment of wafer scale MoS2 atomic layers grown by metal–organic chemical vapor deposition using organo-metal, organo-sulfide, and H2S precursors

Author:

Curtis Michael1ORCID,Maryon Olivia1,McKibben Nicholas1ORCID,Eixenberger Josh23,Chen Chen45,Chinnathambi Karthik6ORCID,Pasko Sergej7,El Kazzi Salim7,Redwing Joan M.45,Estrada David138ORCID

Affiliation:

1. Micron School of Materials Science and Engineering, Boise State University, Boise, ID, USA, 83725

2. Department of Physics, Boise State University, Boise, ID, 83725, USA

3. Center for Advanced Energy Studies, Boise State University, Boise, ID, 83725, USA

4. 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA

5. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA

6. Boise State Center for Materials Characterization, Boise State University, Boise, ID, 83725, USA

7. AIXTRON SE, Herzogenrath, Germany

8. Idaho National Laboratory, Idaho Falls, ID, 83401, USA

Abstract

Wafer scale transition metal dichalcogenide films grown by MOCVD using two different chalcogen precursors are assessed for layer homogeneity and quality. These characteristics are then compared to electrical properties on the growth substrate.

Funder

Directorate for Engineering

Sensors Directorate

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

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