Thin film encapsulation for quantum dot light-emitting diodes using a-SiNx:H/SiOxNy/hybrid SiOx barriers-Reference-Cited by-同舟云学术

Thin film encapsulation for quantum dot light-emitting diodes using a-SiN_x:H/SiO_xN_y/hybrid SiO_x barriers

Published:2022 Issue:7 Volume:12 Page:4113-4119
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lim Keun Yong¹²,Kim Hong Hee¹,Noh Ji Hyun¹,Tak So Hyun²,Yu Jae-Woong²,Choi Won Kook¹³^ORCID

Affiliation:

1. Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul, 02792, Republic of Korea

2. Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Deogyeong-daro 1732, Giheung-gu, Yongin, Gyeonggi 17104, Republic of Korea

3. KIST School, Department of Nanomaterials and Nano Science, University of Science and Technology (UST), 217, Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea

Abstract

The extrapolated T50 at 100 cd m−2 for the a-SiNx:H/SiOxNy/hybrid SiOx (ASH)-encapsulated QD-LEDs is estimated to be 9804 h, which is compatible to that of 12112 h for glass lid encapsulated QD-LEDs.

Funder

Korea Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D1RA07712K

Reference33 articles.

1. Recent Developments in Flexible Organic Light-Emitting Devices

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