Resistive switching phenomena induced by the heterostructure composite of ZnSnO3 nanocubes interspersed ZnO nanowires-Reference-Cited by-同舟云学术

Resistive switching phenomena induced by the heterostructure composite of ZnSnO3 nanocubes interspersed ZnO nanowires

Published:2017 Issue:22 Volume:5 Page:5528-5537
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Siddiqui Ghayas Uddin¹²³,Rehman Muhammad Muqeet¹²³,Choi Kyung Hyun¹²³^ORCID

Affiliation:

1. Department of Mechatronics Engineering

2. Jeju National University

3. Korea

Abstract

The resistive switching effect of various materials has been investigated because of their promising advantages such as high scalability, low cost, simple structure and less power consumption of such memory devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01105A

Reference45 articles.

1. A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices

2. Enhanced resistive switching in all-printed, hybrid and flexible memory device based on perovskite ZnSnO3 via PVOH polymer

3. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

4. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H 2 Pc heterojunction

5. Effect of device structure on the resistive switching characteristics of organic polymers fabricated through all printed technology

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