Electronic structure of the ground and excited states of neutral and charged silicon hydrides, SiHx0/+/−, x = 1

Electronic structure of the ground and excited states of neutral and charged silicon hydrides, SiH_x^0/+/−, x = 1–4

Published:2022 Issue:19 Volume:24 Page:11782-11790
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Claveau Emily E.¹^ORCID,Choi Yeseul²^ORCID,Adamczyk Andrew J.²^ORCID,Miliordos Evangelos¹^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, Auburn University, Auburn, AL 36849-5312, USA

2. Department of Chemical Engineering, Auburn University, Auburn, AL 36849-5312, USA

Abstract

The ground and several excited electronic states of silicon hydrides are investigated quantum mechanically. Our results will elucidate the role of excited stated in the formation mechanism of silicon nanoparticles under plasma conditions.

Funder

Auburn University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP00956K

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