Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

Author:

Eom Taeyong12345,Gwon Taehong12345,Yoo Sijung12345,Choi Byung Joon1675,Kim Moo-Sung895,Ivanov Sergei101112,Adamczyk Andrew101112,Buchanan Iain101112,Xiao Manchao101112,Hwang Cheol Seong12345

Affiliation:

1. Department of Materials Science and Engineering

2. Inter-university Semiconductor Research Center

3. Seoul National University

4. Seoul 151-744

5. Republic of Korea

6. Seoul National University of Science and Technology

7. Seoul 139-743

8. Air Products Korea

9. Yongin-si

10. Air Products and Chemicals, Inc.

11. Carlsbad

12. USA

Abstract

The exchange reaction between the TMS group in [(CH3)3Si]3Sb and Sb2Te3 film formed [(CH3)3Si]2Te, replacing Te in the film with Sb.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Reference33 articles.

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2. Crystallization behavior of Ge-doped eutectic Sb_70Te_30 films in optical disks

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4. Ultrafast crystallization and thermal stability of In–Ge doped eutectic Sb70Te30 phase change material

5. Growth and Phase Separation Behavior in Ge-Doped Sb−Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions

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