Investigation of phase growth and the effect of thickness on bismuth titanate thin films for microelectronic device applications

Author:

Thiruramanathan P.1,Marikani A.2,Manjula S.3,Sadhasivam Sutha4,Saravanan S.5,Bathula Chinna6ORCID,Lee Sejoon78,Lee Youngmin78,Kim Deuk Young78,Sekar Sankar78ORCID

Affiliation:

1. Department of Physics, Ramco Institute of Technology, Rajapalayam-626117, Tamil Nadu, India

2. Department of Physics, Mepco Schlenk Engineering College, Sivakasi-626005, Tamil Nadu, India

3. Department of Computer Science and Engineering, Ramco Institute of Technology-626 117, Rajapalayam, Tamil Nadu, India

4. Department of chemistry, AMET University, Chennai-603112, Tamil Nadu, India

5. Department of Mechanical Engineering, K. Ramakrishnan College of Technology, Tiruchirappalli-621112, Tamil Nadu, India

6. Division of Electronics and Electrical Engineering, Dongguk University–Seoul, Seoul 04620, Republic of Korea

7. Department of Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Republic of Korea

8. Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 04620, Republic of Korea

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were deposited on a platinized silicon (Pt/Ti/SiO2/Si) substrate using a spin-coating technique; they exhibited an excellent dielectric constant of 4228 and a tangent loss of 0.074.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

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