Dual-gate manipulation of a HfZrOx-based MoS2 field-effect transistor towards enhanced neural network applications
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
Abstract
Funder
Shanghai Rising-Star Program
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR05720D
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