A ferroelectric memristor based on the migration of oxygen vacancies-Reference-Cited by-同舟云学术

A ferroelectric memristor based on the migration of oxygen vacancies

Published:2016 Issue:59 Volume:6 Page:54113-54118
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hou Pengfei¹²³⁴⁵,Wang Jinbin¹²³⁴⁵^ORCID,Zhong Xiangli¹²³⁴⁵,Wu Yuexian¹²³⁴⁵

Affiliation:

1. School of Materials Science and Engineering

2. Xiangtan University

3. Hunan Xiangtan 411105

4. China

5. Hunan Provincial National Defense Key Laboratory of Key Film Materials & Application for Equipment

Abstract

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA08257B

Reference25 articles.

1. Piezo-Electric and Allied Phenomena in Rochelle Salt

2. Low-cost and nanoscale non-volatile memory concept for future silicon chips

3. Solid-state memories based on ferroelectric tunnel junctions

4. Tunneling Across a Ferroelectric

5. R. Ramesh , Thin Film Ferroelectric Material and Devices, Kluwer Academic Publishers, Norwell, MA, 1997

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