Strengthening mechanism of Si, V and Ti atoms to the Ag/AlN interface: a study from first-principles calculations-Reference-Cited by-同舟云学术

Strengthening mechanism of Si, V and Ti atoms to the Ag/AlN interface: a study from first-principles calculations

Author:

Bian Wenshan¹²³⁴,Li Runlin⁵⁶⁷⁴,Guo Weibing¹²³⁴⁸^ORCID,Xue Haitao¹²³⁴,Zhang Xiaoming¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Hebei University of Technology

3. Tianjin 300401

4. China

5. The First Department of Electromechanical Technology Research

6. No. 724 Research Institute of CSIC

7. Nanjing 210003

8. State Key Laboratory of Advanced Welding and Joining

Abstract

Active elements play key roles in improving the interfacial bonding between Ag-based fillers and AlN ceramics.

Funder

China Postdoctoral Science Foundation

Hebei University of Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference23 articles.

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