Charge-compensated co-doping stabilizes robust hafnium oxide ferroelectricity-Reference-Cited by-同舟云学术

Charge-compensated co-doping stabilizes robust hafnium oxide ferroelectricity

Published:2024 Issue:17 Volume:12 Page:6257-6266
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Gang¹²,Liu Yulin³,Yan Shaoan²^ORCID,Ma Ningjie³,Xiao Yongguang³^ORCID,Tang Minghua³^ORCID,Long Zhilin¹

Affiliation:

1. College of Civil Engineering, Xiangtan University, Xiangtan 411105, China

2. School of Mechanical Engineering and Mechanics, Xiangtan University, Xiangtan 411105, China

3. School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

Abstract

Compensated co-doping not only achieves charge neutrality but is also highly favorable for the formation of polar phases and the absence of structural defects.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00281D

Reference51 articles.

1. Phase transitions in ferroelectric silicon doped hafnium oxide

2. Recent progress in ferroelectric synapses and their applications

3. The fundamentals and applications of ferroelectric HfO2

4. Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

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