Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite
Author:
Affiliation:
1. School of Materials Science and Engineering
2. Zhengzhou University
3. Zhengzhou 450001
4. People's Republic of China
5. Henan Key Laboratory of Advanced Nylon Materials and Application
Abstract
Fiber-shaped RRAMs with an ON/OFF ratio of approximately 106 have been presented via a MAPbI3 perovskite for flexible wearable electronic textiles.
Funder
National Natural Science Foundation of China
Education Department of Henan Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02579H
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