NIR-triggered logic gate in MXene-modified perovskite resistive random access memory-Reference-Cited by-同舟云学术

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NIR-triggered logic gate in MXene-modified perovskite resistive random access memory

Published:2024 Issue:13 Volume:12 Page:4762-4770
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Rongbin¹^ORCID,Sun Yan¹,Zhao Qianyu¹,Hao Xin¹,Liang Haowei¹,Xu Shengang¹²^ORCID,Liu Yingliang¹²,Bi Xiaoman¹²^ORCID,Cao Shaokui¹²³

Affiliation:

1. School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China

2. Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China

3. Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China

Abstract

The NIR-responsive MXene@MAPbI3-based resistive switching RRAMs at 1064 nm are prepared. They can be applied in integrated data-storing and information-processing, especially in in vivo manually controlled biocompatible microchips.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03847E

Reference54 articles.

1. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

2. Light-Gated Memristor with Integrated Logic and Memory Functions

3. Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

4. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

5. Recent Advances in Flexible Resistive Random Access Memory

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