Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films-Reference-Cited by-同舟云学术

Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films

Published:2016 Issue:81 Volume:6 Page:77440-77451
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Serrano-Núñez M. A.¹²³⁴⁵,Rodríguez-Gómez A.⁶²⁷⁵^ORCID,Escobar-Alarcón L.⁸⁹⁵,Alonso-Huitrón J. C.¹²³⁴⁵

Affiliation:

1. Instituto de Investigaciones en Materiales

2. Universidad Nacional Autónoma de México

3. Ciudad Universitaria

4. Coyoacán 04510

5. Mexico

6. Instituto de Física

7. Coyoacán 01000

8. Departamento de Física

9. Instituto Nacional de Investigaciones Nucleares

Abstract

The photoluminescence (PL) evolution of SiQDs respect deposition and annealing temperatures is studied in a combined manner. The PL identified changes are associated to changes in thin film composition. 150 °C is identified as an important threshold.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA15723H

Reference54 articles.

1. Silicon nanostructures for photonics and photovoltaics

2. Routes toward silicon-based lasers

3. Synthesis of silicon quantum dot buried SiOxfilms with controlled luminescent properties for solid-state lighting

4. Plasma power controlled deposition of SiO_x with manipulated Si Quantum Dot size for photoluminescent wavelength tailoring

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