Superposition of interface and volume type resistive switching in perovskite nanoionic devices-Reference-Cited by-同舟云学术

Superposition of interface and volume type resistive switching in perovskite nanoionic devices

Published:2019 Issue:25 Volume:7 Page:7580-7592
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Bagdzevicius Sarunas¹²³⁴⁵^ORCID,Boudard Michel¹²³⁴⁵,Caicedo José Manuel¹⁶²³⁴,Rapenne Laetitia¹²³⁴⁵,Mescot Xavier⁷⁸⁹¹⁰,Rodríguez-Lamas Raquel¹²³⁴⁵^ORCID,Robaut Florence¹³⁴¹¹¹²,Santiso Jose¹⁶²³⁴^ORCID,Burriel Mónica¹²³⁴⁵^ORCID

Affiliation:

1. Univ. Grenoble Alpes

2. CNRS

3. Grenoble INP

4. Institute of Engineering Univ. Grenoble Alpes

5. LMGP

6. Univ. Savoie Mont Blanc

7. Catalan Institute of Nanoscience and Nanotechnology (ICN2)

8. CSIC and Barcelona Institute of Science and Technology (BIST)

9. 08193 Barcelona

10. Spain

11. SIMAP

12. F-38000 Grenoble

Abstract

Non-filamentary and non-volatile reproducible resistive switching with a high memory window has been obtained for novel nanoionic memristors based on GdBaCo₂O_5+δ.

Funder

Centre National de la Recherche Scientifique

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC00609E

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