Theoretical scheme of nonvolatile strain-switchable high/low resistance based on novel strain-tunable magnetic anisotropy in the Mn2.25Co0.75Ga0.5Sn0.5/MgO superlattice-Reference-Cited by-同舟云学术

Theoretical scheme of nonvolatile strain-switchable high/low resistance based on novel strain-tunable magnetic anisotropy in the Mn_2.25Co_0.75Ga_0.5Sn_0.5/MgO superlattice

Published:2022 Issue:13 Volume:24 Page:7826-7835
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu Yuan¹,Huang Li¹,Liu Hongshuang¹,Wang Liying¹²^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China

2. Tianjin Demonstration Center for Experimental Physics Education, School of Science, Tianjin University, Tianjin 300354, China

Abstract

Strain-induced magnetic anisotropy reversal and 100% spin polarization are realized in the MCGS/MgO system, which can be used in magnetic tunnel junctions where the high/low resistance is rotated solely by the voltage-generated strain.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP05794D

Reference50 articles.

1. Spin-transfer effect and its use in spintronic components

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4. Perpendicular Magnetic Anisotropy Caused by Interfacial Hybridization via Enhanced Orbital Moment inCo/PtMultilayers: Magnetic Circular X-Ray Dichroism Study

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