Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection-Reference-Cited by-同舟云学术

Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection

Published:2021 Issue:23 Volume:13 Page:10579-10586
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhong Mianzeng¹²³⁴⁵^ORCID,Meng Haotong¹²³⁴⁵,Ren Zhihui⁶⁷⁸⁹¹⁰,Huang Le¹¹¹²¹³⁵,Yang Juehan⁶⁷⁸⁹¹⁰,Li Bo¹⁴²¹⁵¹⁶⁵,Xia Qinglin¹²³⁴⁵,Wang Xiaoting⁶⁷⁸⁹¹⁰,Wei Zhongming⁶⁷⁸⁹¹⁰^ORCID,He Jun¹²³⁴⁵

Affiliation:

1. Hunan Key Laboratory of Nanophotonics and Devices

2. School of Physics and Electronics

3. Central South University

4. Changsha 410083

5. China

6. State Key Laboratory of Superlattices and Microstructures

7. Institute of Semiconductors

8. Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering

9. University of Chinese Academy of Sciences

10. Beijing 100083

11. School of Materials and Energy

12. Guangdong University of Technology

13. Guangzhou 510006

14. Department of Applied Physics

15. Hunan University

16. Changsha 410082

Abstract

B-As_0.084P_0.916 crystal-based FETs show 10⁵I_on/off ratio, the highest charge-carrier mobility of 147 cm² V⁻¹ s⁻¹ and exhibit excellent photoresponse properties from 450 to 2200 nm with a responsivity of 37 A W⁻¹, a specific detectivity of 7.18 × 10¹⁰ Jones.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR01715B

Reference48 articles.

1. A library of atomically thin metal chalcogenides