Liquid-phase atomic layer deposition of crystalline hematite without post-growth annealing

Author:

Taniguchi Asako1234ORCID,Taniguchi Takaaki5634,Wagata Hajime789104,Katsumata Ken-ichi111213144,Okada Kiyoshi15164,Matsushita Nobuhiro171815164

Affiliation:

1. Graduate School of Pure and Applied Sciences

2. University of Tsukuba

3. Tsukuba

4. Japan

5. World Premier International Center for Materials Nanoarchitectonics (WPI-MANA)

6. National Institute for Materials Science (NIMS)

7. Department of Applied Chemistry

8. School of Science and Technology

9. Meiji University

10. Kawasaki-shi

11. Photocatalysis International Research Center

12. Research Institute for Science and Technology

13. Tokyo University of Science

14. Noda

15. Tokyo Institute of Technology

16. Tokyo 152-8550

17. Department of Materials Science and Engineering

18. School of Material and Chemical Technology

Abstract

We carried out the liquid phase-atomic layer deposition (LP-ALD) of α-Fe2O3. The deposition temperature (95 °C) and rate (6.3 nm min−1) are much lower and higher than those offered by cutting edge gas-phase ALD techniques, respectively.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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