Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence-Reference-Cited by-同舟云学术

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Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

Published:2016 Issue:15 Volume:8 Page:8024-8032
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sarwar A. T. M. Golam,May Brelon J.,Chisholm Matthew F.,Duscher Gerd J.,Myers Roberto C.

Funder

Army Research Office

Division of Materials Research

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C6NR00132G

Reference37 articles.

1. AlGaN multiple quantum well based deep UV LEDs and their applications

2. Ultraviolet light-emitting diodes based on group three nitrides

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

5. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

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4. Effect of substrate rotation speed on AlGaN nanowire deep ultraviolet light-emitting diodes by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2023-04-11

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