Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga<sub>2</sub>O<sub>3</sub> with high hole mobility-Reference-Cited by-同舟云学术

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility

Published:2022 Issue:17 Volume:10 Page:6673-6681
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ma Congcong¹²,Wu Zhengyuan¹²^ORCID,Jiang Zhuoxun¹,Chen Ying¹²,Ruan Wei¹,Zhang Hao¹³^ORCID,Zhu Heyuan¹,Zhang Guoqi¹,Kang Junyong⁴,Zhang Tong-Yi⁵,Chu Junhao²,Fang Zhilai¹²

Affiliation:

1. School of Information Science and Technology, and Academy for Engineering and Technology, Fudan University, Shanghai 200433, China

2. Institute of Optoelectronics, Fudan University, Shanghai 200433, China

3. Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China

4. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China

5. Materials Genome Institute, Shanghai University, 333 Nanchen Road, Shanghai 200444, China

Abstract

The feasibility and conductivity mechanisms of p-type N-doped β-Ga2O3 are demonstrated and clarified using first-principles hybrid functional calculations and the phase transition technique.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

National Postdoctoral Program for Innovative Talents

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05324H

Reference50 articles.

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2. H.Morkoç , Handbook of Nitride Semiconductors and Devices: Electronic and Optical Processes in Nitrides , Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim , Germany , 2008 , vol. 2, ch. 4 and 5

3. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

4. Wide-bandgap semiconductor materials: For their full bloom

5. Ultrawide bandgap semiconductors

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