Epitaxial growth of structure-tunable ZnO/ZnS core/shell nanowire arrays using HfO<sub>2</sub> as the buffer layer-Reference-Cited by-同舟云学术

Epitaxial growth of structure-tunable ZnO/ZnS core/shell nanowire arrays using HfO₂ as the buffer layer

Published:2022 Issue:20 Volume:14 Page:7579-7588
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ru Fan¹²,Xia Jing¹²,Li Xuanze¹²,Liu Pei¹²,Qiao Peiyu¹²,Li Yuye¹²,Cao Jianyu¹²,Tian Lifeng¹²,Zhang Wenjun³^ORCID,Meng Xiang-Min¹²^ORCID

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China

2. Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China

3. Center of Super-Diamond and Advanced Films (COSADF) and Department of Materials Science and Engineering, City University of Hong Kong SAR, P.R.China

Abstract

A two-step thermal deposition method is developed to synthesize structure-tunable and single-crystalline ZnO/ZnS core/shell nanowire arrays using HfO2 as buffer layer, which can promote fabricating high-quality heterostructure based nanodevices.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR01560A

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1. Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures