Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

Published:2021 Issue:4 Volume:3 Page:997-1004
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Wang Liming¹²³⁴⁵^ORCID,Zhang Yichi¹²³⁴⁵^ORCID,Sun Hao⁶³⁷⁵,You Jie¹²³⁴⁵,Miao Yuanhao¹²³⁴⁵,Dong Zuoru⁸⁹¹⁰¹¹⁵,Liu Tao⁸⁹¹⁰¹¹⁵,Jiang Zuimin⁸⁹¹⁰¹¹⁵,Hu Huiyong¹²³⁴⁵

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory

2. School of Microelectronics

3. Xidian University

4. Xi'an

5. China

6. School of Physics and Optoelectronic Engineering

7. Xi'an 710071

8. State Key Laboratory of Surface Physics

9. Department of Physics

10. Fudan University

11. Shanghai 200433

Abstract

Lateral and vertical growth modes of defect-free SiGeSn nanostructures are observed and systematically investigated both experimentally and theoretically.

Funder

Fundamental Research Funds for the Central Universities

Xidian University

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D0NA00680G

Reference49 articles.

1. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects