From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors-Reference-Cited by-同舟云学术

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From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors

Published:2019 Issue:45 Volume:7 Page:14116-14122
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yu Ruixian¹²³⁴,Wang Guodong¹²³⁴,Shao Yongliang¹²³⁴^ORCID,Wu Yongzhong¹²³⁴^ORCID,Wang Shouzhi¹²³⁴,Lian Gang¹²³⁴^ORCID,Zhang Baoguo¹²³⁴,Hu Haixiao¹²³⁴,Liu Lei¹²³⁴,Zhang Lei¹²³⁴^ORCID,Hao Xiaopeng¹²³⁴^ORCID

Affiliation:

1. State Key Lab of Crystal Materials

2. Shandong University

3. Jinan

4. P. R. China

Abstract

The effects of porous structures on the performance of a GaN UV photodetector were investigated for the first time.

Funder

National Natural Science Foundation of China

Fundamental Research Fund of Shandong University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC04820K

Reference39 articles.

1. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

2. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

3. Recent progress of high-quality GaN substrates by HVPE method

4. Mechanical Properties of Nanoporous GaN and Its Application for Separation and Transfer of GaN Thin Films

5. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

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