Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain-Reference-Cited by-同舟云学术

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Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain

Published:2014 Issue:9 Volume:6 Page:4936-4941
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shao Rui-wen¹²³,Zheng Kun¹²³,Wei Bin¹²³,Zhang Yue-fei¹²³,Li Yu-jie¹²³,Han Xiao-dong¹²³,Zhang Ze⁴⁵⁶⁷,Zou Jin⁸⁹¹⁰

Affiliation:

1. Institute of Microstructure and Properties of Advanced Materials

2. Beijing University of Technology

3. Beijing 100124, China

4. Department of Materials Science and Engineering

5. Key State Laboratory of Silicon Materials

6. Zhejiang University

7. Hangzhou, China

8. Material Engineering and Centre for Microscopy and Microanalysis

9. The University of Queensland

10. Brisbane, Australia

Abstract

Bandgap engineering is a common practice for tuning semiconductors for desired physical properties.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR00059E

Reference47 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. Giant piezoresistance effect in silicon nanowires

3. Elastically relaxed free-standing strained-silicon nanomembranes

4. Reversible electromechanical characteristics of carbon nanotubes underlocal-probe manipulation

5. Small-Diameter Silicon Nanowire Surfaces

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