A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Abstract

AbstractPiezotronics is the coupling effect of the piezoelectric and semiconductor properties; however, the piezoelectric constant of the piezoelectric semiconductor is relatively small while the ferroelectric materials with large piezoelectric constant typically possess weak semiconductor properties, thus limiting the effective coupling coefficient of the piezotronic materials and devices. Here, a piezotronics and magnetic dual‐gated ferroelectric semiconductor transistor (PM‐FEST) is fabricated by Terfenol‐D, aluminum oxide (Al2O3), and ferroelectric semiconductor α‐In2Se3, which has a large piezoelectric coefficient, room‐temperature ferroelectricity, and dipole locking. The charge carrier transport and corresponding drain current of the PM‐FEST can be directly modulated by either the applied magnetic field or external strain. At a low magnetic field (<200 mT), the maximum current on/off ratio of α‐In2Se3 based PM‐FEST is as high as 1700%. Compared with traditional piezotronic devices, the PM‐FEST demonstrates a higher gauge factor (2.3 × 104) than that of the piezoelectric semiconductors. This work provides a possibility of realizing magnetism‐modulated electronics in semiconductors by exploiting the coupling of piezotronics and magnetostriction.