Domain state exchange bias in a single layer FeRh thin film formed <i>via</i> low energy ion implantation-Reference-Cited by-同舟云学术

Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Published:2023 Issue:3 Volume:11 Page:903-909
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cress Cory D.¹^ORCID,Erve Olaf van ’t²,Prestigiacomo Joseph²,LaGasse Samuel W.¹,Glavic Artur³^ORCID,Lauter Valeria⁴^ORCID,Bennett Steven P.²^ORCID

Affiliation:

1. Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC, USA

2. Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC, USA

3. Laboratory for Neutron and Muon Instrumentation, Paul Scherrer Institut, PSI, Villigen 5232, Switzerland

4. Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, USA

Abstract

Low-energy ion implantation is used to form a single-layer exchanged biased FeRh film. Neutron scattering measurements confirm the presence of pinned uncompensated moments and magnetic domains consistent with a domain state exchange bias system.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC04014J

Reference39 articles.

1. Two interface effects: Exchange bias and magnetic proximity

2. Thermal degradation of spin valve multilayers caused by Mn migration

3. Electrical switching of an antiferromagnet

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