Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes-Reference-Cited by-同舟云学术

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Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes

Published:2017 Issue:42 Volume:9 Page:16223-16231
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Seo Tae Hoon¹²³⁴,Lee Gun Hee⁵⁶⁷⁸⁴^ORCID,Park Ah Hyun⁹¹⁰⁴,Cho Hyunjin¹²³⁴^ORCID,Kim Jun-Hee¹²³⁴,Chandramohan S.¹¹¹²¹³¹⁴,Jeon Seong-Ran¹⁵¹⁶⁴,Jang Se Gyu¹²³⁴^ORCID,Kim Myung Jong¹²³⁴¹⁷,Suh Eun-Kyung⁵⁶⁷⁸⁴

Affiliation:

1. Applied Quantum Composites Research Center

2. Korea Institute of Science and Technology

3. Jeonbuk 55324

4. Republic of Korea

5. School of Semiconductor and Chemical Engineering

6. Semiconductor Physics Research Center

7. Chonbuk National University

8. Jeonju 54899

9. Korea Atomic Energy Research Institute

10. Jeonbuk 56212

11. Department of Physics and Nanotechnology

12. SRM University

13. Kattankulathur 603 203

14. India

15. Korea Photonics Technology Institute (KOPTI)

16. Gwangju 61007

17. Division of Nano & Information Technology

Abstract

High density dislocations, large compressive strain, and poor thermal properties are major obstacles for the light emitting diodes (LED) performance.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR04508E

Reference59 articles.

1. Solid-State Light Sources Getting Smart

2. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

3. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

4. III–nitrides: Growth, characterization, and properties

5. Growth defects in GaN films on sapphire: The probable origin of threading dislocations

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2. 1D and 2D Boron Nitride Nano Structures: A Critical Analysis for Emerging Applications in the Field of Nanocomposites;ACS Omega;2024-06-12

3. Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes;PLOS ONE;2022-11-17

4. Boron nitride nanotubes: A review of recent progress on purification methods and techniques;Journal of Materials Research;2022-08-12

5. Hydroxylated boron nitride nanotube‐reinforced polyvinyl alcohol nanocomposite films with simultaneous improvement of mechanical and thermal properties;Polymer Composites;2020-08-27

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