The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories-Reference-Cited by-同舟云学术

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

Published:2015 Issue:37 Volume:17 Page:23931-23937
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Souchier E.¹²³⁴⁵,D'Acapito F.⁶⁷³,Noé P.¹²³⁴⁵,Blaise P.¹²³⁴⁵,Bernard M.¹²³⁴⁵,Jousseaume V.¹²³⁴⁵

Affiliation:

1. Univ. Grenoble Alpes

2. F-38000 Grenoble

3. France

4. CEA

5. LETI

6. CNR-IOM-OGG c/o ESRF

7. F-38043 Grenoble Cedex 9

Abstract

GeS_x-based CBRAM devices are studied using synchrotron characterization before and after switching in order to understand the local environment around Ag atoms.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP03601A

Reference35 articles.

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