Gate-controlled heat generation in ZnO nanowire FETs-Reference-Cited by-同舟云学术

Gate-controlled heat generation in ZnO nanowire FETs

Published:2017 Issue:21 Volume:19 Page:14042-14047
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Pescaglini Andrea¹²³⁴^ORCID,Biswas Subhajit⁵⁶³⁴⁷,Cammi Davide⁸⁹¹⁰¹¹,Ronning Carsten⁸⁹¹⁰¹¹,Holmes Justin D.⁵⁶³⁴⁷,Iacopino Daniela¹²³⁴^ORCID

Affiliation:

1. Tyndall National Institute

2. Dyke Parade

3. Cork

4. Ireland

5. Department of Chemistry and Tyndall National Institute

6. University College Cork

7. AMBER@CRANN

8. Institute of Solid State Physics

9. Friedrich-Schiller-University of Jena

10. 07743 Jena

11. Germany

Abstract

A three-terminal nanowire architecture has been shown capable to enhance the Joule heating power in single semiconductor nanowires expanding the range of applications for nano-heater devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP01356F

Reference30 articles.

1. Large-Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems

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5. Programmed Adsorption and Release of Proteins in a Microfluidic Device

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