Promoted high temperature carrier mobility and thermoelectric performance of InTe enabled by altering scattering mechanism-Reference-Cited by-同舟云学术

Promoted high temperature carrier mobility and thermoelectric performance of InTe enabled by altering scattering mechanism

Published:2019 Issue:19 Volume:7 Page:11690-11698
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhu Huaxing¹²³⁴⁵,Zhang Bin⁶⁴⁵,Wang Guiwen⁶⁴⁵,Peng Kunling¹²³⁴⁵,Yan Yanci¹²³⁴⁵,Zhang Qing⁷⁸⁹⁵,Han Xiaodong⁷⁸⁹⁵,Wang Guoyu¹⁰¹¹¹²¹³^ORCID,Lu Xu¹²³⁴⁵^ORCID,Zhou Xiaoyuan¹²³⁴⁵^ORCID

Affiliation:

1. Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials

2. College of Physics

3. Chongqing University

4. Chongqing 401331

5. P. R. China

6. Analytical and Testing Center of Chongqing University

7. Beijing Key Laboratory and Institute of Microstructure and Property of Advanced Materials

8. Beijing University of Technology

9. Beijing 100124

10. Chongqing Institute of Green and Intelligent Technology

11. Chinese Academy of Sciences

12. Chongqing 400714

13. China

Abstract

Sb nano-precipitates, which serve to alter the vibrational frequency of localized phonon modes that facilitate inter-valley scattering, emerge in pristine InTe after addition of Sb. As a result, exponentially declined carrier mobility is promoted by nearly 50% at 723 K in InTe–Sb_0.01, leading to enhanced thermoelectric performance.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C9TA00475K

Reference35 articles.

1. Compromise and Synergy in High‐Efficiency Thermoelectric Materials

2. SnSe: a remarkable new thermoelectric material