Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals-Reference-Cited by-同舟云学术

Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals

Published:2016 Issue:2 Volume:9 Page:454-460
ISSN:1754-5692
Container-title:Energy & Environmental Science
language:en
Short-container-title:Energy Environ. Sci.

Author:

Peng Kunling¹²³⁴⁵,Lu Xu¹²³⁴,Zhan Heng¹²³⁴,Hui Si⁶⁷⁸⁹,Tang Xiaodan¹²³⁴⁵,Wang Guiwen¹²³⁴⁵,Dai Jiyan¹⁰¹¹¹²¹³,Uher Ctirad⁶⁷⁸⁹,Wang Guoyu⁵¹⁴¹⁵⁴,Zhou Xiaoyuan¹²³⁴

Affiliation:

1. College of Physics

2. Chongqing University

3. Chongqing 401331

4. People's Republic of China

5. Chongqing Institute of Green and Intelligent Technology

6. Department of Physics

7. University of Michigan

8. Ann Arbor

9. USA

10. Department of Applied Physics

11. The Hong Kong Polytechnic University

12. Kowloon

13. Hong Kong, China

14. Chinese Academy of Sciences

15. Chongqing 400714

Abstract

The increased number of carrier pockets near the Fermi level and the optimized carrier concentration in doped SnSe single crystal can lead to a high averageZT_ave∼ 1.2 from 300 K to 800 K and a peakZT_maxvalue in excess of 2.0 at 800 K along the crystallographicb-axis.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/EE/C5EE03366G

Reference38 articles.

1. The panoscopic approach to high performance thermoelectrics

2. Thermoelectric materials: Energy conversion between heat and electricity

3. Convergence of electronic bands for high performance bulk thermoelectrics