Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application-Reference-Cited by-同舟云学术

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Published:2021 Issue:26 Volume:13 Page:11370-11379
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Beom Keonwon¹,Han Jimin²,Kim Hyun-Mi³,Yoon Tae-Sik²^ORCID

Affiliation:

1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA

2. Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea

3. Korea Electronics Technology Institute, Gyeonggi-do 13509, Republic of Korea

Abstract

Synaptic transistor with a hafnium oxide gate insulator and an indium–zinc oxide channel layer exhibited wide range synaptic weight modulation with a tunable drain current as an artificial synapse in neuromorphic systems.

Funder

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR02911H

Reference53 articles.

1. Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

2. Emerging neuromorphic devices

3. Resistive switching materials for information processing

4. Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction

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