One-step solvothermal synthesis and growth mechanism of well-crystallized β-Ga2O3 nanoparticles in isopropanol-Reference-Cited by-同舟云学术

One-step solvothermal synthesis and growth mechanism of well-crystallized β-Ga2O3 nanoparticles in isopropanol

Published:2021 Issue:37 Volume:23 Page:6567-6573
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Takezawa Kengo¹,Lu Jinfeng²,Numako Chiya³^ORCID,Takami Seiichi¹^ORCID

Affiliation:

1. Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. EP Application Department, EP Business Unit, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan

3. Department of Chemistry, Graduate School of Science, Chiba University, 1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan

Abstract

Well-crystallized β-Ga2O3 nanoparticles were synthesized by solvothermal treatment of Ga(NO3)3 in isopropanol at 400 °C without performing the calcination process.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00728A

Reference40 articles.

1. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

2. Development of gallium oxide power devices

3. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3

4. High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

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