Solution-processed Ge(<scp>ii</scp>)-based chalcogenide thin films with tunable bandgaps for photovoltaics-Reference-Cited by-同舟云学术

Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics

Published:2022 Issue:20 Volume:13 Page:5944-5950
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Hu Liyan¹²,Feng Mingjie¹³,Wang Xia⁴,Liu Shunchang¹⁵^ORCID,Wu Jinpeng¹⁵,Yan Bin¹⁵,Lu Wenbo¹⁵,Wang Fang²^ORCID,Hu Jin-Song¹⁵^ORCID,Xue Ding-Jiang¹⁵^ORCID

Affiliation:

1. Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

2. Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030006, China

3. National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China

4. School of Materials Science and Engineering, Hubei Univeristy, Wuhan 430062, China

5. University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

Solution-processed Ge(ii)-based chalcogenide films are achieved by introducing hypophosphorous acid as a suitable reducing agent and strong acid and demonstrated for photovoltaic application.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/SC/D1SC07043F

Reference54 articles.

1. Semiconductor quantum dots: Technological progress and future challenges

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