Composition Dependence of the Band Gaps of Semiconducting GeS<i><sub>x</sub></i>Se<sub>1–<i>x</i></sub> van der Waals Alloys-Reference-Cited by-同舟云学术

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Composition Dependence of the Band Gaps of Semiconducting GeS_xSe_1–x van der Waals Alloys

Published:2023-07-31 Issue:16 Volume:35 Page:6374-6381
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Sutter Eli¹²^ORCID,Komsa Hannu-Pekka³^ORCID,French Jacob S.⁴,Sutter Peter⁴^ORCID

Affiliation:

1. Department of Mechanical and Materials Engineering, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States

2. Nebraska Center for Materials and Nanoscience, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States

3. Microelectronics Research Unit, University of Oulu, FI-90014 Oulu, Finland

4. Department of Electrical and Computer Engineering, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States

Funder

Army Research Office

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.3c01069

Reference51 articles.

1. Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties

2. Band offsets and heterostructures of two-dimensional semiconductors

3. Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing

4. Growth of MoS2(1–x)Se2x (x = 0.41–1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition

5. Growth of Large-Area 2D MoS2(1-x)Se2xSemiconductor Alloys

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration of layered group IV selenides: From SnSe–SnSe2-xSx core-shell crystals to complex (SnSe–SnSe2-xSx)-GeSe van der waals heterostructures;Materials Today Chemistry;2024-06

2. Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors;Small;2023-12-06

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