An asymmetric contact-induced self-powered 2D In2S3 photodetector towards high-sensitivity and fast-response-Reference-Cited by-同舟云学术

An asymmetric contact-induced self-powered 2D In2S3 photodetector towards high-sensitivity and fast-response

Published:2020 Issue:13 Volume:12 Page:7196-7205
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lu Jianting¹²³⁴,Zheng Zhaoqiang¹²³⁴⁵^ORCID,Yao Jiandong⁶⁷⁸⁹³,Gao Wei¹²³⁴,Xiao Ye¹²³⁴^ORCID,Zhang Menglong¹⁰¹¹³¹²,Li Jingbo¹²³⁴¹⁰

Affiliation:

1. School of Materials and Energy

2. Guangdong University of Technology

3. Guangzhou

4. P. R. China

5. Department of Electronic Engineering

6. State Key Laboratory of Optoelectronic Materials and Technologies

7. Nanotechnology Research Center

8. School of Materials Science & Engineering

9. Sun Yat-sen University

10. Institute of Semiconductors

11. South China Normal University

12. P.R. China

Abstract

Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation.

Funder

National Natural Science Foundation of China

Department of Education of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00517G

Reference53 articles.

1. Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field

2. Gradient Energy Band Driven High‐Performance Self‐Powered Perovskite/CdS Photodetector

3. TiO2 Nanorod Arrays Based Self-Powered UV Photodetector: Heterojunction with NiO Nanoflakes and Enhanced UV Photoresponse

4. Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures

5. An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

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